JPH0319211Y2 - - Google Patents
Info
- Publication number
- JPH0319211Y2 JPH0319211Y2 JP1985157766U JP15776685U JPH0319211Y2 JP H0319211 Y2 JPH0319211 Y2 JP H0319211Y2 JP 1985157766 U JP1985157766 U JP 1985157766U JP 15776685 U JP15776685 U JP 15776685U JP H0319211 Y2 JPH0319211 Y2 JP H0319211Y2
- Authority
- JP
- Japan
- Prior art keywords
- helium container
- container
- insulating material
- helium
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052734 helium Inorganic materials 0.000 claims description 28
- 239000001307 helium Substances 0.000 claims description 28
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 8
- 230000008646 thermal stress Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 238000005336 cracking Methods 0.000 claims description 3
- 239000002887 superconductor Substances 0.000 claims description 3
- 238000005219 brazing Methods 0.000 claims description 2
- 239000012774 insulation material Substances 0.000 claims 1
- 229910000833 kovar Inorganic materials 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000011449 brick Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 1
- 150000002371 helium Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985157766U JPH0319211Y2 (en]) | 1985-10-17 | 1985-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985157766U JPH0319211Y2 (en]) | 1985-10-17 | 1985-10-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6268208U JPS6268208U (en]) | 1987-04-28 |
| JPH0319211Y2 true JPH0319211Y2 (en]) | 1991-04-23 |
Family
ID=31080622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985157766U Expired JPH0319211Y2 (en]) | 1985-10-17 | 1985-10-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0319211Y2 (en]) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
-
1985
- 1985-10-17 JP JP1985157766U patent/JPH0319211Y2/ja not_active Expired
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501344B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US7094680B2 (en) | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7429516B2 (en) | 2002-02-26 | 2008-09-30 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6268208U (en]) | 1987-04-28 |
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